IPD031N03LGATMA1

MOSFET N-Ch 30V 90A DPAK-2 OptiMOS 3

IRLR8103VTRPBF

MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC

IRF9Z34NSTRLPBF

MOSFET MOSFT PCh -55V 19A 100mOhm 23.3nC

IPD90N04S403ATMA1

MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2

IRLR3103TRPBF

MOSFET 30V 1 N-CH HEXFET 19mOhms 33.3nC

IPD90N06S405ATMA2

MOSFET MOSFET

IGD06N60TATMA1

IGBT 晶体管 Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diod

IPD90N06S407ATMA2

MOSFET MOSFET

IRFB7546PBF

MOSFET MOSFET N CH 60V 75A TO-220AB

IKD03N60RFATMA1

IGBT 晶体管 IGBT w/ INTG DIODE 600V 5A

IRFIZ24NPBF

MOSFET MOSFT 55V 13A 70mOhm 13.3nC

IRF6665TRPBF

MOSFET 100V 1 x N-CH HEXFET for Digital Audio

IRF7420TRPBF

MOSFET MOSFT PCh -12V -11.5A 14mOhm 38nC

IPD079N06L3GBTMA1

MOSFET N-Ch 60V 50A DPAK-2 OptiMOS 3

IRFR825TRPBF

MOSFET 500V 3.5A 2.2Ohm MotIRFET