IPB80N06S207ATMA4

MOSFET N-CHANNEL_55/60V

IPB80N06S208ATMA2

MOSFET N-CHANNEL_55/60V

IPB80N06S2L09ATMA2

MOSFET N-CHANNEL_55/60V

IPD30N06S223ATMA2

MOSFET N-CHANNEL_55/60V

IPZ60R040C7XKSA1

MOSFET HIGH POWER_NEW

IKW75N65EL5XKSA1

IGBT 晶体管 650V IGBT Trenchstop 5

IPA60R060C7XKSA1

MOSFET HIGH POWER_NEW

IPT111N20NFDATMA1

MOSFET

IRL60S216

MOSFET "60V, 298A, 1.95 mOhm 170 NC Qg"

IKW50N60DTPXKSA1

IGBT 晶体管 The new 600V TRENCHSTOP Performance has been developed based on 600V TRENCHSTOP IGBT technology. The new IGBT series combines the best trade-off between conduction and switch-off energy with outstanding robustness and excellent EMI behavior.

IPB100N12S305ATMA1

MOSFET N-CHANNEL 100+

IHW25N120E1XKSA1

IGBT 晶体管 IGBT PRODUCTS

IKW30N65H5XKSA1

IGBT 晶体管 Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market s high e

IPT60R150G7XTMA1

MOSFET HIGH POWER NEW

IPLU300N04S41R1XTMA1

MOSFET N-CHANNEL_30/40V