英飞凌相关型号_深圳瞄钧科技有限公司

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IPT65R105G7XTMA1

MOSFET

IKW30N65NL5XKSA1

IGBT 晶体管 650V IGBT Trenchstop 5

IPP076N15N5AKSA1

MOSFET

IKW30N60DTPXKSA1

IGBT 晶体管 The new 600V TRENCHSTOP Performance has been developed based on 600V TRENCHSTOP IGBT technology. The new IGBT series combines the best trade-off between conduction and switch-off energy with outstanding robustness and excellent EMI behavior.

IPD80R280P7ATMA1

MOSFET

IPD30N06S2L13ATMA4

MOSFET N-CHANNEL_55/60V

IPL65R099C7AUMA1

MOSFET HIGH POWER BEST IN CLASS

MOSFET

MOSFET

MOSFET

MOSFET

MOSFET HIGH POWER_NEW

IKZ50N65ES5XKSA1

IGBT 晶体管 To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control l

IPL60R105P7AUMA1

MOSFET HIGH POWER_NEW

IPZA60R120P7XKSA1

MOSFET HIGH POWER_NEW